Wet Etching and Related Topics

Tuesday, October 13, 2015: 11:00-15:40
104-A (Phoenix Convention Center)
Chairs:
Kurt Wostyn and Steven Verhaverbeke
11:00
1027
(Invited) Selective Etch of Si and SiGe for Gate All-Around Device Architecture
K. Wostyn, F. Sebaai, J. Rip, H. Mertens (imec), L. Witters, R. Loo (imec, Belgium), A. Y. Hikavyy, A. Milenin (imec), N. Horiguchi (imec), N. Collaert (Imec), A. Thean (Imec), P. W. Mertens, S. De Gendt (Katholieke Universiteit Leuven, imec), and F. Holsteyns (imec)
11:30
1028
Advanced Wet-Etch-Only Process for Complete Tri-Layer Rework
P. Steinke, J. Calvo (Fraunhofer Institute for Photonic Microsystems), and B. Uhlig (Fraunhofer Institute for Photonic Microsystems)
11:50
1029
Etching of Silicon Nitride in 3D NAND Structures
D. Bassett, W. Printz (Tokyo Electron), and T. Furukawa (Tokyo Electron)
12:10
Lunch Break
14:00
1030
Selective Silicon Nitride Etch with Hot Diluted HF– an Alternative to Orthophosphoric Acid
P. Garnier (STMicroelectronics), M. Neyens (STMicroelectronics), T. Massin (stmicroelectronics), D. Thomassin (stmicroelectronics), and C. Maurice (STMicroelectronics)
14:20
1031
Wet Etchant Diffusion through Photoresist during Gate Oxide Patterning
M. Neyens (STMicroelectronics), P. Garnier (STMicroelectronics), M. Garach, N. Rochat (CEA LETI), C. Licitra (CEA Léti), and R. Tiron (CEA Léti)
14:40
1032
Acoustic Characterization of Patterning Degradation during Wet Etching
C. Virgilio (IEMN), P. Garnier (STMicroelectronics), M. Foucaud, A. Devos, D. Pinceau (STMicroelectronics), J. Carlier, P. Campistron (IEMN), B. Nongaillard (IEMN), M. Neyens (STMicroelectronics), and L. Broussous (STMicroelectronics)
15:00
1033
Post Salicidation Clean: Removal of Unreacted Pt from High Pt Content NiPt Silicide
A. Sehgal, G. Derderian (GLOBALFOUNDRIES, Inc.), and P. Muralidhar (GLOBALFOUNDRIES, Inc.)
15:20
Break
See more of: G02: Semiconductor Cleaning Science and Technology 14 (SCST 14)
See more of: Electronic Materials and Processing
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