Fabrication and Characterization

Tuesday, October 13, 2015: 16:00-18:00
102-B (Phoenix Convention Center)
Chairs:
Sachiko Ono and R. J. Martin-Palma
16:00
739
(Invited) Organization in Molecular Layers Covalently Attached to Oxide-Free Silicon Surfaces
C. Henry de Villeneuve, T. L. Nguyen Le, S. Klaes (CNRS-Ecole polytechnique), P. Allongue (CNRS-Ecole polytechnique), and F. Ozanam (CNRS - Ecole Polytechnique)
16:30
740
Effects of Substrate Composition on Morphology and Growth of Porous Oxide Layers
H. Tsuchiya, M. S. Kim, T. Erami, Y. Otani (Osaka University), and S. Fujimoto (Osaka University)
16:50
741
Porous Layers Composed of Oxide Crystallites Formed by the Combination of Laser Ablation and Anodization of Metal
A. S. Ganas (West Chester University), D. A. Znamensky (West Chester University), N. Méndez Alba (Universidad Autónoma Metropoplitana-Iztapalapa), J. L. Hernández-Pozos (Universidad Autónoma Metropoplitana-Iztapalapa), and K. W. Kolasinski (West Chester University)
17:10
742
Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination
T. Sato, H. Kida, Y. Kumazaki (Hokkaido University), and Z. Yatabe (Hokkaido University)
17:30
743
(Invited) Thermal Carbonization of Porous Silicon: The Current Status and Recent Applications
J. Salonen, M. Kaasalainen, O. P. Rauhala, L. Lassila, M. Hakamies (University of Turku), T. Jalkanen (University of Turku), R. Hahn (FAU), P. Schmuki (University of Erlangen-Nuremberg (FAU)), and E. Mäkilä (University of Turku)