New Materials and Processes II

Wednesday, October 14, 2015: 10:00-12:20
Phoenix East (Hyatt Regency)
Chairs:
O. van der Straten and Stefan De Gendt
10:00
990
(Invited) ALD Materials for the Integration of III-V Based Transistors
M. Givens (ASM America), F. Tang (ASM America), Q. Xie (ASM Belgium), and J. W. Maes (ASM Belgium)
10:40
991
Improving Graphene Conductivity through Selective Atomic Layer Deposition
C. Liu (Department of Materials Science and Engineering), X. Han, W. Bao, A. J. Pearse (University of Maryland), L. Hu (University of Maryland, college park), and G. W. Rubloff (Department of Materials Science and Engineering)
 
992
Synthesis of Transition Metal Dichalcogenide WSe2thin Films By Atomic Layer Deposition (Cancelled)
11:20
993
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films
P. R. Chalker, P. A. Marshall, K. Dawson, C. J. Sutcliffe, I. F. Brunell, N. Sedghi, S. Hall (University of Liverpool), and R. J. Potter (University of Liverpool)
12:00
994
New Insights into Sequential Infiltration Synthesis
J. W. Elam, M. Biswas, S. Darling, A. Yanguas-Gil, J. D. Emery (Argonne National Laboratory), A. B. F. Martinson (Argonne National Laboratory), P. F. Nealey (University of Chicago), T. Segal-Peretz (University of Chicago), Q. Peng (Duke University), J. Winterstein (National Institute of Standards and Technology), J. A. Liddle (National Institute of Standards and Technology), and Y. C. Tseng (Argonne National Laboratory)
See more of: G01: Atomic Layer Deposition Applications 11
See more of: Electronic Materials and Processing
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