Materials Characterization 2

Tuesday, October 13, 2015: 15:00-16:00
Ellis East (Hyatt Regency)
N. Ohtani and Travis J Anderson
Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers
Y. Yang, J. Guo, O. Y. Goue, H. Wang, F. Wu, B. Raghothamachar (Stony Brook University), M. Dudley (Stony Brook University), G. Chung (Dow Corning Compound Semiconductor Solutions), J. Quast, E. Sanchez (Dow Corning Inc.), I. Manning (Dow Corning Inc.), and D. Hansen (Dow Corning Compound Semiconductor Solutions)
Study on the Relaxation Process in 4H-SiC Homoepitaxy Growth
J. Guo, Y. Yang, F. Wu, O. Y. Goue, B. Raghothamachar (Stony Brook University), and M. Dudley (Stony Brook University)