Recent developments in vertical integration schemes such as 3D-NAND have introduced a significant need for fast oxide slurries. Balancing low defectivity and high planarization with extremely large bulk oxide removals is crucial. Ceria-based slurries with fine-tuned chemistries are well suited to meet these demands. Mechanisms for ceria-based slurries performance on oxide polish rates have been the subject of investigation for a number of years now. How these proposed mechanisms can drive the design and development of next generation CMP slurries will be discussed. Furthermore, stop on nitride (SON) remains a stringent requirement for various integration schemes. Mechanistic insight into SON additives and their role in ceria slurries will also be discussed.