CMP Fundamentals

Thursday, 2 June 2016: 08:30-13:30
Sapphire 411 B (Hilton San Diego Bayfront)
Chair:
V. Chaitanya
08:30
Welcoming Remarks
08:40
1045
(Invited) Quantification and Characterization of Adsorbed BTA on Copper Surfaces Under Conditions Relevant to Barrier CMP
B. Wu and S. Raghavan (University of Arizona)
09:20
1046
The Use of Coefficient of Friction (COF) Measurements As a CMP Slurry Development Tool
J. A. Schlueter (Air Products and Chemicals, Inc.) and M. Graham (Air Products and Chemicals Inc.)
 
1047
The Mechanism of the Bridge Defect Caused By the Reaction with the Dispersant Polymer in Slurry and the Double Patterning Photo Layer (Cancelled)
10:00
Morning break
10:20
1048
Material Removal Behavior of Nano-Sized Cerium Hydroxide Abrasive Slurry for Chemical Mechanical Polishing
H. J. Kim, T. H. Lee, and A. Ryan (GLOBALFOUNDRIES)
10:40
1049
Mechanisms and Development of Ceria-Based, Fast Oxide Slurries
N. D. Urban, D. Dickmann, B. Her, and B. Santora (Ferro Corporation)
11:00
1050
Fluorescence Correlation Spectroscopic Studies of Particle Properties for Colloidal Ceria Abrasives Used in Chemical-Mechanical Planarization
D. K. Schorr, M. A. Smith (Bradley University), A. K. Rawat, C. T. Carver, M. Mansour (Intel Corporation), and E. E. Remsen (Bradley University)
11:20
1051
Probing the Role of Slurry Chemistry on Nanoparticle-Media Adsorption Relevant to Cu CMP Filtration Applications
R. A. Wienck (Department of Chemistry, Lewis University), A. Mlynarski (Lewis University), P. Connor, P. Levy (Pall Corporation), and J. J. Keleher (Lewis University, Department of Chemistry)
11:40
Lunch
 
1052
Molecular Characterization and Design of CMP Pads (Cancelled)
See more of: D02: Chemical Mechanical Polishing 14
See more of: Dielectric Science and Materials
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