Thursday, 2 June 2016: 09:40
Sapphire 411 B (Hilton San Diego Bayfront)
At the present time, semiconductor process technology node is going under 10nm from 20~30nm base. The 1X nm design rule will be general trend in the next few years. In this situation, the Chemical Mechanical Planarization (CMP) is focusing on the fine defect which is under 20nm. At this conference, I would present the mechanism of defect which caused by dispersant polymer, additive polymer and slurry inhibitor in ultimate fine design technology era. We found the medium weighted polymer chains were still remained after polishing even if in situ cleaning and ex-situ cleaning was performed. And the remained polymer reacted with the Photo Resistance (PR) material while processing double patterning (DPT). Since the defect size was so small, the defect was not detected in the processing. It is supposed that the compounds composed of slurry polymer and PR material block the etching reaction and make a bridge between line and line spacer. To prevent these polymer enhanced defects, well designed slurry should be used and the perfect cleaning solution is especially needed. The failure mechanism is that a lot of minus charged polymers attached on plus charged layer react with PR and DPT layer and finally going hardening on annealing around 200°C. So, the cleaning solution have to have higher polymer solubility to remove the additive polymer chains on minus or plus charged layer.