Dielectrics in Memory Systems

Monday, 30 May 2016: 08:25-10:30
Sapphire 410 A (Hilton San Diego Bayfront)
Chairs:
Daniel Bauza , Zhi David Chen and Yaw S. Obeng
08:25
Welcoming Remarks
08:30
983
(Invited) Non-Volatile Resistive Memory: Technology Capable of Revolutionary Compromises
G. Navarro, E. Vianello, V. Sousa, G. Molas, E. Nowak, B. De Salvo, and L. Perniola (CEA, LETI, MINATEC Campus)
09:00
984
(Invited) Floating Gate Type SOI-FinFET Flash Memories with Different Channel Shapes and Interpoly Dielectric Materials
Y. Liu (National Institute of AIST), T. Nabatame (National Institute for Materials Science), T. Matsukawa, K. Endo (National Institute of AIST), S. O'uchi (AIST), W. Mizubayashi, Y. Morita, S. Migita, H. Ota (National Institute of AIST), T. Chikyow (National Institute for Materials Science), and M. Masahara (National Institute of AIST)
09:30
Intermission
09:50
985
Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices
Y. C. Chen, Y. F. Chang, X. Wu, M. Guo (The University of Texas at Austin), B. Fowler (PrivaTran LLC), F. Zhou (The University of Texas at Austin), C. H. Pan, T. C. Chang (Department of Physics, National Sun Yat-Sen University), and J. C. Lee (University of Texas at Austin)
10:10
986
Characterization of Porous BEOL Dielectrics for Resistive Switching
Y. Fan (Virginia Tech ECE Department), S. W. King (Intel Corporation), J. Bielefeld (Intel Inc, Logic Technology Development Lab), and M. K. Orlowski (ECE Department Virginia Tech)
See more of: D01: Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing -and- Solid State Topics General Session
See more of: Dielectric Science and Materials
<< Previous Session | Next Session >>