Monday, 30 May 2016: 10:30-12:30
Sapphire 410 A (Hilton San Diego Bayfront)
Chairs:
Luca Perniola
and
Yongxun Liu
10:30
(Invited) III-V Selective Area Growth and Epitaxial Functional Oxides on Si: From Electronic to Photonic Devices
C. Merckling, Z. Liu (imec), M. Hsu (imec, Gent. Univ), S. Hasan, S. Jiang (imec), S. El Kazzi (IMEC), G. Boccardi (Imec), N. Waldron (imec), Z. Wang, B. Tian (Ghent Univ.), M. Pantouvaki, J. Van Campenhout (imec), N. Collaert (imec, Belgium), M. Heyns (KU Leuven), D. Van Thourhout (Ghent Univ.), W. Vandervorst (imec), and A. Thean (imec, Belgium)
11:00
(Invited) Atomically Controlled Processing for Si and Ge CVD Epitaxial Growth
J. Murota (Tohoku University, Japan), Y. Yamamoto, I. Costina (IHP), B. Tillack (IHP, Technische Universitat Berlin, Germany), V. Le Thanh (Universite Aix Marseille, France), R. Loo, and M. Caymax (imec, Belgium)
989
Control of the Surface Chemistry of Magnetron-Deposited Silicon Nitride Etched with Various Wet Treatments (Cancelled)
12:10
RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
K. Kanomata (Yamagata University, CREST, JST), K. Tokoro, T. Imai, P. P. Pansila, M. Miura (Yamagata University), B. Ahmmad (Yamagata University,, CREST, JST), S. Kubota (Yamagata University, CREST, JST), K. Hirahara, and F. Hirose (Yamagata University)
