High Dielectric Constant Materials and Metal Gates

Wednesday, 1 June 2016: 14:00-16:35
Sapphire 410 A (Hilton San Diego Bayfront)
Chairs:
J. Heitmann and Takahiro Nagata
14:00
1015
(Invited) Development of New High-Dielectric Constant Thin Film Materials for Next-Generation Nanoelectronics
T. Nagata (National Institute for Materials Science), S. Kumaragurubaran (National Institute for Materials Science (NIMS)), K. Takahashi, S. G. Ri, Y. Tsunekawa, S. Suzuki (COMET Inc.), and T. Chikyow (National Institute for Materials Science (NIMS))
14:30
1016
(Invited) Ternary Rare Earth Based Oxides for Nitride Based Devices
T. C. U. Tromm, A. Schäfer (Forschungszentrum Jülich GmbH), M. Luysberg (Ernst Ruska-Centre, Jülich Research Centre), F. A. Wendt, A. Besmehn (Forschungszentrum Jülich GmbH), M. Mikulics (Forschungszentrum Julich), H. Hardtdegen, S. Mantl, and J. Schubert (Forschungszentrum Jülich GmbH)
15:00
Intermission
15:10
1017
(Invited) Process and Integration of Dielectrics Required for 10nm and Beyond Scaling
R. D. Clark, K. Tapily, S. Consiglio, T. Hakamata, D. O'Meara, D. Newman (TEL Technology Center, America, LLC), M. Collings (TEL Tehcnology Center, America, LLC), D. Szymanski, C. S. Wajda, and G. J. Leusink (TEL Technology Center, America, LLC)
15:40
1018
(Invited) High-k Materials and Embedded Nanocrystals for Electronic and Photonic Applications
J. Heitmann (Institute of Applied Physics,TU Bergakademie Freiberg)
16:10
1019
Ta-Mo Isomorphous Alloy Systems for Metal Gate Apllications
H. Y. Yu, Y. J. Deng, and Y. S. Lai (National United University)
16:30
Concluding Remarks
See more of: D01: Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing -and- Solid State Topics General Session
See more of: Dielectric Science and Materials
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