Reliability and Analysis

Tuesday, 31 May 2016: 14:00-16:00
Sapphire 410 A (Hilton San Diego Bayfront)
Chairs:
Irina Ionica and Joseph J. Kopanski
14:00
1004
(Invited) Trench-Gated MOSFET Instability Caused by High Temperature Reverse-Bias Stress
J. Hao (Fairchild Semiconductor)
14:30
1005
(Invited) Tuning the Strain and Physical Properties of Highly Epitaxial Perovskite Thin Films on Vicinal Substrates
Y. Lin, G. Yao, M. Gao (University of Electronic Science and Technology of China), and C. Chen (University of Texas at San Antonio)
15:00
Intermission
15:10
1006
(Invited) On the Modeling of the Charge Pumping Curves
D. Bauza (IMEP-LAHC)
15:40
1007
Two States Phenomenon Induced By Neighboring Device Coupling Effect in MIS(p) Tunnel Current
W. C. Kao, J. Y. Chen, and J. G. Hwu (National Taiwan University)
See more of: D01: Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing -and- Solid State Topics General Session
See more of: Dielectric Science and Materials
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