CMP Applications and Integration

Wednesday, 1 June 2016: 08:30-11:40
Sapphire 411 B (Hilton San Diego Bayfront)
Chair:
Gautam Banerjee
08:30
Introductory Remarks
08:40
1030
Impact of Business Trends on Advanced CMP Process Technology Development
R. Rhoades (Entrepix, Inc.)
09:00
1031
(Invited) Combined Gas Cluster Ion Beam (GCIB) and Chemical-Mechanical Planarization (CMP) Process for Replacement Metal Gate (RMG) Application
W. T. Tseng, J. Long, K. Mohan, C. Wu, and T. Kagalwala (GLOBALFOUNDRIES)
09:40
Morning Break
10:00
1032
Ru Film Characterization Correlated to Advanced CMP Slurry Performance
M. Stender, B. Derecskei, and J. A. Schlueter (Air Products and Chemicals, Inc.)
10:20
1033
The Study on Keeping the Pad Surface Condition in W CMP Process
D. W. Oh (Memory Clean/CMP Technology Team, Samsung Electronics)
10:40
1034
A Ring Type Residue Formation in Post Cu CMP Cleaning
H. Kim, D. H. Liim, J. Moon, J. Y. Kim, H. Hwang (Memory Clean/CMP Technology Team, Samsung Electronics), and T. Kim (Sungkyunkwan University, SAINT & ME)
11:00
1035
(Invited) Study on Cu Surface Flake Generation Mechanism of 1x Nm Cu CMP Process
J. C. Yang, S. Baral, S. G. Ahn, and G. Yocum (Globalfoundries US)
See more of: D02: Chemical Mechanical Polishing 14
See more of: Dielectric Science and Materials
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