Zinc oxide is a II-VI compound semiconductor that is in possession of a unique constellation of interesting material properties. While at the present moment zinc oxide is primarily being used as an electronic material for low-field thin-film transistors, transparent conducting oxide contacts, sensing, and field emitter device applications, recent electron transport work has pointed to the potential of this material for high-field and high-frequency electronic device applications. In this paper, we present some recent results on the steady-state and transient electron transport within zinc oxide, suggesting that this material, having higher peak and saturation electron drift velocities than silicon carbide and gallium nitride, may also be considered as an alternative material to silicon carbide and gallium nitride for high-power and high-frequency field effect transistors. Limits on expectations for zinc oxide based device performance will be projected and contrasted with those expected for silicon carbide and gallium nitride based devices. Upon the basis provided by these results, possible future applications for zinc oxide based devices will be suggested.