Oxide 2

Tuesday, 30 May 2017: 10:00-12:40
Cambridge (Hilton New Orleans Riverside)
Chairs:
Vidhya Chakrapani and Jennifer K Hite
10:00
1297
(Invited) Unified Band Diagram Framework for the Development of Cation Intercalation Materials for Next Generation Batteries
M. J. Young (National Institute of Standards and Technology), A. M. Holder (National Renewable Energy Laboratory), and C. B. Musgrave (University of Colorado)
10:30
1298
(Invited) Discovering Wide Band Gap Oxide Semiconductors By Engineering Strong Electron Correlations
S. Ramanathan (Purdue)
11:00
1299
Vacancy-Induced Semiconductor–Insulator–Metal Transitions in Nonstoichiometric Transition Metal Oxides
Q. Wang, A. Puntambekar, and V. Chakrapani (Rensselaer Polytechnic Institute)
11:20
1300
Abnormal I-V Characteristics of Nanoparticle Based Al / ZnO / Au Diodes
H. von Seggern and P. Mundt (Technische Universität Darmstadt)
11:40
1301
(Invited) Effect of Temperature and 5 Mev Proton Irradiation Damage on Performance of b-Ga2O3 Photodetectors
F. Ren, S. J. Pearton, S. Ahn (University of Florida), J. Kim, Y. Jung, S. Oh (Korea University), M. A. Mastro, J. K. Hite, and C. R. Eddy Jr. (U.S. Naval Research Laboratory)
12:10
1302
(Invited) Zinc Oxide As a Potential Material for Future Electronic Device Applications
P. Siddiqua (The University of British Columbia), M. Shur (Rensselaer Polytechnic Institute), and S. K. O'Leary (The University of British Columbia)
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 18
See more of: Electronic and Photonic Devices and Systems
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