1219
Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors

Tuesday, 30 May 2017: 15:50
Churchill C2 (Hilton New Orleans Riverside)
D. Buckley, D. McNulty (University College Cork), V. Z. Zubialevich (Tyndall National Institute), P. J. Parbrook (Tyndall National Insitute), and C. O'Dwyer (University College Cork)
Zinc oxide is an important optoelectronic material, of particular interest due to its wide band gap (Eg ~ 3.3 eV at 300 K), large exciton binding energy (~66 meV) and especially for the variety of methods by which it can be processed. Moreover, ZnO is readily able to alloy with other metals in the oxide form and has a lattice that can facilitate interstitial doping. This gives ZnO a key role in the area of optoelectronics, metal oxide thin films and thin film transistor (TFT) technologies.

We demonstrate that crystalline, epitaxial-like and highly ordered ZnO thin films can be achieved from a precursor liquid at relatively low temperature via spin-coating. The synthesised films are smooth, stoichiometric ZnO with controllable thickness. An iterative layer-by-layer coating schematic is employed to demonstrate the effects of film thickness on structure, morphology as well as the surface and internal defects. Characterisation of the crystallinity, morphology, O-vacancy formation, stoichiometry, surface roughness and thickness variation was determined through X-ray diffraction, scanning and transmission electron and atomic force microscopy, X-ray photoelectron and photoluminescence spectroscopy, and the data of multi-layered ZnO correlated to defect formation and electrical conductivity.

It is imperative that high crystal quality epitaxial-like thin films can be formed from solution processing to compete with physical deposition methods. We demonstrate that iterative spin-coating of deposited ZnO films results in a transition in crystal texture with increasing thickness (number of layers) from the [] m-plane to the [] c-plane. The films attain a c-axis preferential orientation, with no other crystalline peaks present. Results show that the film’s surface morphology was very smooth, with average rms roughness <0.15 nm. Examination of these films also shows the consistency of the surface composition and defect level while highlighting the