In recent years the class of dilute nitride III/V-semiconductors and corresponding heterostructures are gaining increasing interest both from fundamental as well as applied point of view. This is caused by their unique optoelectronic properties and in particular by the novel conduction band formation process leading to an extreme band gap bowing with increasing N-content in the crystal.

The novel material system Ga(NAsP) can be grown lattice-matched to (001) Si-substrate. The incorporation of N in the Ga(NAsP)-material allows for a significant reduction in the lattice constant, which leads on one side to a dislocation free deposition. On the other side the specific conduction band formation process in these materials is used to realize a direct band gap semiconductor. By applying a variety of physical investigation techniques the high crystalline quality as well as the direct band gap character of the novel Ga(NAsP)-material system have been verified. Ga(NAsP)/(BGa)(AsP)-MQWH were grown on exactly oriented (001) Si substrates embedded in thick (BGa)P separate confinement hetero-layers by metalorganic vapour phase epitaxy (MOVPE). The optoelectronic properties and first lasing characteristics of Ga(NAsP)-MQWH on (001) Si-substrate will be presented and possible integration concepts with Si-CMOS-based micro- and nanoelectronics will be discussed.