In the present communication, we report on our efforts to synthesize 1.8-2.2 eV band-gap chalcopyrite materials for PEC water splitting. Specifically, we investigated the effect of sulfur on the optical and photoelectrochemical characteristics of the copper chalcopyrite material class. Using co-evaporated 1 μm-thick CuGaSe2 as a baseline system, we demonstrate that the substitution of selenium with sulfur can be accomplished through a simple annealing step. As a result, a dramatic change in optical properties was observed, with a bandgap increase from 1.6 eV (CuGaSe2) to 2.4 eV (CuGaS2). Then, by simply adjusting the indium content during the initial growth process, the bandgap of sulfurized copper chalcopyrite was decreased from 2.4 eV to 2.0 eV. X-ray diffraction data indicated successful bulk sulfurization by the shift of the prominent (112), (220), and (312) reflections to higher angles. Saturated photocurrent densities of 5 mA/cm2 were achieved with 2.0 eV red CuIn0.3Ga0.7S2 photocathodes in 0.5M H2SO4 under AM1.5G simulated illumination. From this proof of concept experiment, we have further developed new synthesis approaches and innovative characterization protocols to achieve PV-grade wide bandgap sulfide-based chalcopyrites capable of generating photocurrent densities over 10 mA.cm-2.