MoS₂ is a promising two-dimensional material that is being considered as a replacement for Si in sub-5 nm device technologies. Integration could include the growth or transfer of large areas of MoS₂ films onto Si wafers. Subsequent isolation of devices fabricated on MoS₂ films is an open research area that has received little attention. Although reactive ion etching or chemical etching can be used to create isolated channels, these techniques are problematic due to the weak van der Waals interaction between the two-dimensional films and their substrates. Subsequent wet processing during lithography can cause delamination from the substrate, resulting in mechanical damage to the films or even displacement of the channels. An alternative to physical isolation of MoS₂ was the focus of this study. It is known that, in many semiconductors, radiation damage can be used for isolation. In this study, large-area 3-5 layer MoS₂ films were grown on sapphire and subsequently transferred onto SiO₂/Si wafers. The MoS₂ was then exposed to low energy phosphorus plasma implantation at biases of 100, 200, and 300 V and a dose of 1 x 10¹⁴ cm^-2. Electrical measurements using patterned Ni/Au contacts show that after implantation, independent of bias, there is a 10⁵ increase in resistivity and a similar increase in specific contact resistivity of the MoS₂. TEM shows that the film is still crystalline and there is no measurable etching of the films after implantation, suggesting that the increase in resistivity is likely the result of radiation damage in the MoS₂. The thermal stability of the increase in electrical resistivity was assessed by a series of 15 minute anneals beginning at 325°C in a sulfur overpressure and progressing up to 525°C under an Al₂O₃ ALD cap. The resistivity increase remained unchanged after annealing, suggesting that this is a stable alternative to physical isolation in MoS₂ devices.