Interfaces and Defects

Monday, 29 May 2017: 08:10-10:00
Chequers (Hilton New Orleans Riverside)
Chair:
Lain-Jong Li
08:30
He-Ion Induced Defect Generation and Doping of 2D MoS2 Monolayers
F. Aryeetey, D. Singh, K. Nowlin, and S. Aravamudhan (North Carolina A&T State University)
08:50
Low Energy Phosphorus Plasma Implantation for Isolation of MoS2 Devices
K. Haynes, R. Murray, X. Zhao (University of Florida), D. Chiappe, S. Sutar, I. Radu (imec), C. Hatem (Applied Materials), S. Perry, and K. S. Jones (University of Florida)
09:10
Atomic Engineering of Chalcogenide Layer in Transition Metal Chalcogenides
C. W. Yang (KAUST), A. Y. Lu, and L. J. Li (King Abdullah University of Science and Technology)
09:30
Break