To this end, first, a wide range of charge states and configurations of Cu defects in a dislocation free ceria model are calculated to elucidate the defect chemistry for Cu ions in bulk ceria. The formation energies of these defects as a function of chemical potential of oxygen and the Fermi energy indicate that the most preferred Cu defect is Cu1+ interstitial. This finding differs from previous calculations in the literature where only a copper vacancy complex is calculated, but is consistent with reported experimental observations. Moreover, the equilibrium Cu defect concentration in ceria is negligible, indicating a low solubility of Cu in bulk ceria.
Second, an edge dislocation model in ceria was constructed. We found that the Cu defect formation energy at the edge dislocation core is 2 eV lower than that in the bulk, indicating a tendency for Cu to enrich at the dislocation compared to the bulk ceria (which has a very low solubility of Cu). More interestingly, and importantly, Cu has a lower oxidation state in the dislocation core than in the bulk. This lower oxidation state is more active for catalytic activity. Both the enrichment of Cu at the dislocation core and the more active oxidation state indicate that dislocations in ceria are beneficial for increasing surface electro-catalytic reaction kinetics with single atom catalysts.