(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

Monday, 29 May 2017: 08:05
Cambridge (Hilton New Orleans Riverside)
C. Zhou, A. Ghods, V. G. Saravade, P. V. Patel, K. L. Yunghans, C. Ferguson (Missouri S&T), Y. Feng, X. Jiang (Purdue Univ), B. Kucukgok (Purdue Univ.), N. Lu (Purdue Unniversity), and I. Ferguson (Missouri Science and Technology)
The development of wide-band gap compound semiconductors materials and structures led by III-Nitrides (GaN, InN, etc.) have fueled a revolution of LEDs for lighting applications. However, these materials and related devices have also made contributions in the area of high power electronics, detectors, solar cells, spintronics and, more recently, thermal neutron detection and thermoelectric applications. This presentation will show how III-Nitrides could be considered an universal compound semiconductor material that may be able to replace the traditional III-V materials in many applications.