III-V Materials and Devices 1

Monday, 29 May 2017: 08:00-10:00
Cambridge (Hilton New Orleans Riverside)
Chairs:
Jennifer K Hite and Travis J Anderson
08:00
Welcoming Remarks
08:05
1280
(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review
C. Zhou, A. Ghods, V. G. Saravade, P. V. Patel, K. L. Yunghans, C. Ferguson (Missouri S&T), Y. Feng, X. Jiang (Purdue Univ), B. Kucukgok (Purdue Univ.), N. Lu (Purdue Unniversity), and I. Ferguson (Missouri Science and Technology)
08:35
1281
(Invited) GaN-on-Diamond Electronics: The Next Generation Microwave Technology
M. Kuball (University of Bristol)
09:05
1282
(Invited) AlN and ScAlN Contour Mode Resonators for RF Filters
M. D. Henry (Sandia National Laboratories), R. Timon, T. R. Young (Sandia National Labs), C. Nordquist, and B. Griffin (Sandia National Laboratories)
09:35
Break
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 18
See more of: Electronic and Photonic Devices and Systems
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