Motivated by the experimental observation that reactive ion etching produces a phosphorus oxide / black phosphorus interface that does not inhibit photo-luminescence yield [2], we have fabricated bP field effect transistors with an encapsulating phosphorus oxide layer that acts as a passivation layer. X-ray photoemission spectroscopy (XPS) reveals the oxide layer to have a P205 stoichiometry. Air stable, top gated bP field effect transistors with room temperature field effect mobilities exceeding 100 cm2/Vs are demonstrated using a gate oxide formed by reactive ion etching and subsequent atomic layer deposition of aluminum oxide.
We have also investigated the magnetotransport properties of black phosphorus at modest fields. Weak localization was observed in a black phosphorus field-effect transistor 65 nm thick [3]. The weak localization behavior was found to be in excellent agreement with the Hikami-Larkin-Nagaoka [4] model for fields up to 1 T, from which characteristic scattering lengths could be inferred. The temperature dependence of the phase coherence length Lϕ was investigated, and above 1 K, it was found to decrease weaker than the Lϕ ~ T −1/2 dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in quasi-one-dimensional systems such as metallic nanowires [5] and carbon nanotubes [6]. The potential role of strong in-plane anisotropy resulting from a puckered honyecomb structure on localization will be discussed.
[1] A. Favron et al., Nat. Mater. 14, 826 (2015).
[2] J. Pei et al., Nat. Comm. 7, 10450 (2016).
[3] N. Hemsworth et al., Phys. Rev. B 94, 245404 (2016).
[4] S. Hikami et al., Prog. Theor. Phys. 63, 707 (1980).
[5] D. Natelson et al., Phys. Rev. Lett. 86, 1821 (2001).
[6] J. Appenzeller et al., Phys. Rev. B 64, 121404(R) (2001).