Physics and Electronics

Thursday, 1 June 2017: 10:00-12:00
Churchill A1 (Hilton New Orleans Riverside)
Chair:
Matt W Graham
10:00
819
(Invited) Black Phosphorus Field Effect Transistors: Passivation By Oxidation, and the Role of Anisotropy in Magnetotransport
T. Szkopek, G. Gervais (McGill University), M. Peruzzini (Istituto di Chimica dei Composti Organometallici - CNR), and S. Heun (NEST Istituto Nanoscienze-CNR, Scuola Normale Superiore)
10:20
820
Hyperbolic Cooling of a Graphene on BN Transistor in the Zener-Klein Regime
W. Yang (Ecole Normale Superieure), S. Berthou (Université Paris Diderot, Ecole Normale Supérieure), X. Lu (Chinese Academy of Sciences), K. Watanabe (National Institute of Materials Science), G. Zhang (Chinese Academy of Sciences), E. Baudin (Ecole Normale Superieure), B. Placais (CNRS, Ecole Normale Superieure), and C. Voisin (Ecole Normale Supérieure)
10:40
821
Electrical Properties of the Multilayered Graphene in Terms of Carrier Density and Mobility
M. S. Kim, H. M. Kim (Seoul National University), S. Son (Haesung DS), M. Kim, S. Lee (Seoul National University), D. K. Won, J. Ryu (Haesung DS), and K. B. Kim (Seoul National University)
11:00
822
Trap Densities at Gate Dielectric/2D Channel Interface By Capacitance Measurements
A. Krishnaprasad and T. Roy (University of Central Florida)
11:20
823
Doping of Graphene By Atomic Layer Deposition of Ruthenium
M. Kim, K. J. Kim (Seoul National University), S. J. Lee (Yeungnam University), H. M. Kim (Seoul National University), S. Y. Cho (University of Illinois at Urbana-Champaign), M. S. Kim (Seoul National University), S. H. Kim (Yeungnam University), and K. B. Kim (Seoul National University)
11:40
824
Thickness Dependence of Graphene-Hexagonal Boron Nitride-Graphene Based 2D Capacitor
Y. Stehle, I. Vlassiouk (Oak Ridge National Lab), G. Polyzos (oak Ridge National Lab), S. Smirnov (new mexico state university), and P. Datskos (oak Ridge National Lab)