Graphene and 2D Materials in Electronics

Monday, 29 May 2017: 08:35-12:00
Norwich (Hilton New Orleans Riverside)
Chair:
Stefan DeGendt
08:35
Welcoming Remarks
08:40
987
(Invited) Graphene Synthesis and Transfer Improvements for Applications in the Semiconductor Industry
S. Brems, K. Verguts, N. Vrancken, B. Vermeulen, C. Porret, L. Peters, C. H. Wu, C. Huyghebaert (Imec vzw), K. Schouteden, C. Van Haesendonck (Katholieke Universiteit Leuven), and S. De Gendt (Imec vzw)
09:10
988
(Invited) Switchable White Graphene: Electrochemistry of the Boron Nitride Nanomesh
S. F. L. Mertens (KU Leuven, TU Wien)
09:40
Intermission
10:00
989
(Invited) Electronics in Flatland
S. K. Banerjee (University of Texas, Austin)
10:30
990
(Invited) Energy Efficient Transistors with 2D Materials
R. Rahman, H. Ilatikhameneh, T. Ameen, and G. Klimeck (Purdue University)
11:00
991
(Invited) MOCVD of 2D Nanomaterials for Next-Generation Electronic and Optoelectronic Devices
M. Heuken (AIXTRON SE, GaN Device Technology, RWTH Aachen University), M. Marx, H. Kalisch, and A. Vescan (GaN Device Technology, RWTH Aachen University)
11:30
992
(Invited) Progress in Flexible 2D Nanoelectronics
S. Park, W. Zhu (The University of Texas, Austin), and D. Akinwande (The University of Texas at Austin)
See more of: D01: Emerging Materials for Post CMOS Devices/Sensing and Applications 8
See more of: Dielectric Science and Materials
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