Semiconductor-solution Interfaces 2

Wednesday, 31 May 2017: 09:30-12:40
Churchill C2 (Hilton New Orleans Riverside)
Chairs:
Colm O'Dwyer and Arnaud Etcheberry
09:30
Break
10:00
1226
(Invited) Determining Solid/Liquid Junction Energetics By Operando Ambient-Pressure X-Ray Photoelectron Spectroscopy
M. H. Richter, M. F. Lichterman, B. S. Brunschwig, N. S. Lewis, and H. J. Lewerenz (California Institute of Technology)
10:40
1227
(Invited) Electrodeposition of Germanene
J. L. Stickney, N. Bui, J. Jung, and T. J. Reber (University of Georgia)
11:20
1228
Measurement of Charge Transfer Kinetics and Energetics at Microscopic Si/Liquid Contacts
M. Lancaster and S. Maldonado (University of Michigan)
11:40
1229
(Invited) Synthesis, Kinetics, Characterization and Application of Sodium and Potassium (poly)Selenides for Chalcogenide Semiconductor Doping
D. Colombara (University of Luxembourg), A. M. Gonçalves, D. Aureau, and A. Etcheberry (Institut Lavoisier de Versailles)
12:20
1230
The Role of Surface States in the Electrochemical Behavior of Semiconductor-Electrolyte Interfaces from First Principles
Q. Campbell and I. Dabo (The Pennsylvania State University)
See more of: G01: Processes at the Semiconductor Solution Interface 7
See more of: Electronic Materials and Processing
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