Plasma Nano Science and Technology 2

Monday, 29 May 2017: 14:00-15:40
Trafalgar (Hilton New Orleans Riverside)
Chairs:
Mahendra Kumar Sunkara , Uros Cvelbar and Peter Mascher
14:00
(Invited) Advanced Plasma Etching Processing: Atomic Layer Etching for Nanoscale Devices
T. Tsutsumi (Nagoya University), M. Zaitsu, A. Kobayashi, N. Kobayashi (ASM Japan K. K.), and M. Hori (Nagoya University)
14:40
High-Rate Etching of Copper By High-Pressure Hydrogen-Based Plasma
H. Ohmi, H. Kakiuchi, K. Yasutake (Dept. of Precision Science & Technology, Osaka University), and Y. Kubota (Tokyo Electron Limited)
15:00
Nanoscale Spin-Transfer Torque MRAM Etching Using Various Gases
K. C. Yang (SungKyunKwan University), S. W. Park (Samsung Electronics), H. S. Lee, and G. Y. Yeom (SungKyunKwan University)