(Invited) Incommensurate Epitaxy of Low-Dimensional Metal Halides

Wednesday, 4 October 2017: 14:30
Chesapeake E (Gaylord National Resort and Convention Center)
J. Shi (Rensselaer Polytechnic Institute)
In conventional chemical/ionic epitaxy, both symmetry and wavelength of lattice potentials of substrate largely determine epilayer’s structure and physical property. Thus, to grow high quality thin film, great efforts have been taken to search for proper substrate. In this talk, I will discuss our recent results on the growth of low dimensional halide perovskite via incommensurate epitaxy. It is found that lattice mismatch and crystal symmetry become insignificant in such epitaxy. The growth results seem to be connected with a static distortion wave prediction in 1977.