(Invited) Band Gap Engineering and Optoelectronic Performance of Indium Gallium Arsenide Nanobelts

Tuesday, 3 October 2017: 11:50
Chesapeake E (Gaylord National Resort and Convention Center)


Low dimensional III-V compound semiconductors, such as GaAs, InAs, and their ternary alloys, exhibit unique optical and electronic properties. Their abilities of efficient carrier transport, light emission, and detection means they can be used in integrated transistors, lasers, light-emitting diodes, and detectors for infrared communications [1-3]. Very recently, intense research has been directed toward the fabrication and application of the III-V nanoplates/sheets owing to their realization of multiterminal electronic devices such as Hall bars, quantum point contacts, and so forth. However, the influence of growth condition on the formation of these nanostructures is still unclear. Furthermore, these nanoplates/sheets generally suffer from small and irregular morphology, demonstrating the difficulties in the controlled growth. Importantly, realizing the continuously tunable composition and heterojunction of these nanostructures remains great challenges, particularly for the technologically important InGaAs. It's well known that InGaAs is of great interest for high-performance device in electronics and optoelectronics [4,5]. Unfortunately, the transistors and photodetectors based on low dimensional InGaAs nanostructures still need improvement due to their low on/off ratio, poor photoresponsivity, and so on. To address these problems, we have realized the controlled growth of high-quality single-crystal InGaAs nanobelts with fully tunable composition/bandgap via an orientation selective vapor growth. Density functional theory calculations reveal that the surface energy variation induced by the chemical potential of arsenic (μAs) is critical for the formation of these nanobelts. When configured into transistors, the InGaAs nanobelt devices exhibit impressive electrical properties with the turn on/off ratio of 2×107, better than any value reported for a InGaAs nanowire device to date. The broadband phototransistor (covering 405-1,550 nm) were further fabricated with an ultrahigh photoresponsivity of >8000 A/W and an external quantum efficiency of >106 %, both of which are much higher than those of all the reported InGaAs nanowire photodetectors. These results suggest that the novel InGaAs nanobelts may open up new opportunities for various applications in integrated electronics, optoelectronics, and quantum electronics.


[1] Xuehong Zhang, Xiao Wang, Anlian Pan et al., Adv. Mater., 2017, 1604431.

[2] Xinliang Chen, Xuehong Zhang, Anlian Pan et al., Nanotechnology, 2016, 27, 50.

[3] Huang Tan, Xuehong Zhang, Anlian Pan et al., Nano-Micro Lett., 2016, 8, 29-35.

[4] Liang Ma, Xuehong Zhang, Anlian Pan et al., Semicond. Sci. Technol., 2015, 30, 105033.

[5] Liang Ma, Xiujuan Zhuang, Anlian Pan et al., Nano Lett., 2014, 14,694–698.

[6] Pinyun Ren, Qinglin Zhang, Anlian Pan et al., Adv. Mater., 2014, 26, 7444-7449.