Using CMOS-compatible Pd catalysts and a complementary experimental and theoretical approach, we demonstrate successfully the formation of high-performance, <111>-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth mode in surfactant-assisted chemical vapor deposition. When back-gated field-effect transistors (FETs) are fabricated using these NWs, the Pd-catalyzed GaSb NW exhibits a superior peak hole mobility of ~330 cm2V-1s-1, and this value is close to the mobility limit for a NW channel diameter of ~30 nm with a free carrier concentration of ~1018 cm-3, indicating excellent homogeneity of the NW phase purity, the growth orientation, the surface morphology and the electrical characteristics. Contact printing process is also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, and a calculated peak hole mobility of ∼65cm2V-1s-1 is achieved, confirming the potential construction and application of these high-performance electronic devices. 3
We acknowledge “Qilu young scholar” program of Shandong University.
1. Yang, Z.-x.; Han, N.; Fang, M.; Lin, H.; Cheung, H.-Y.; Yip, S.; Wang, E.-J.; Hung, T.; Wong, C.-Y.; Ho, J. C., Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires. Nature Communications 2014, 5, 5249.
2. Yang, Z.-x.; Yip, S.; Li, D.; Han, N.; Dong, G.; Liang, X.; Shu, L.; Hung, T. F.; Mo, X.; Ho, J. C., Approaching the Hole Mobility Limit of GaSb Nanowires. Acs Nano 2015, 9 (9), 9268-9275.
3. Yang, Z.-x.; Liu, L.; Yip, S.; Li, D.; Shen, L.; Zhou, Z.; Han, N.; Hung, T. F.; Pun, E. Y.-B.; Wu, X.; Song, A.; Ho, J. C., Complementary Metal Oxide Semiconductor-Compatible, High-Mobility,< 111>-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition. ACS nano 2017, DOI: 10.1021/acsnano.7b01217.