Wednesday, 4 October 2017: 11:20
Chesapeake E (Gaylord National Resort and Convention Center)
In this talk, we will discuss how single crystalline compound semiconductors may be grown on non-epitaxial substrates using liquid metals to define the geometry on both the nano- and micro-scale. Specifically, we will first talk about a general thermodynamic approach towards preventing dewetting of ultra-thin liquid metals with capping layers, defining the basic requirements for our growth substrates and capping layer. Next, we will talk about simple binary III-V semiconductors, and the general rules surrounding growth on non-epitaxial substrates. We will then discuss how this growth may be used to grow pure phases of more complex materials that have multiple stable phases, such as tin based compounds. Finally, we will discuss how this approach can be used to grow uniform ternary materials on non-lattice matched substrates. We discuss the quality and optoelectronic properties of each of these materials and will provide perspectives on the present challenges and paths forward.