G05 Poster Sesssion

Wednesday, 4 October 2017: 18:00-20:00
Prince George's Exhibit Hall D/E (Gaylord National Resort and Convention Center)
1222
Ferroelectric Heterostructures for Synapse Devices
T. Choi (Sejong University)
1223
I-V Characteristics of NiO Nanowire Based Resistive Change Memory
K. Takase, T. Aono (Nihon University), K. Sugawa (College of Science & Technology, Nihon University), T. Shimizu, and S. Shingubara (Kansai University)
See more of: G05: Oxide Memristors
See more of: Electronic Materials and Processing
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