H03 Poster Session

Tuesday, 3 October 2017: 18:00-20:00
Prince George's Exhibit Hall D/E (Gaylord National Resort and Convention Center)
Sensitivity of Breakdown Voltage of Power Transistors to Dopant Impurities
C. Zhu (Florida State University, Aeropropulsion, Mechatronics and Energy Center) and P. Andrei (Florida A&M University and Florida State University)
(Invited) Three-Section Adjusted Field Limited Rings Applicable for SiC 2200V Power MOSFETs
X. Li, W. Yang, L. Li, X. Deng, and B. Zhang (University of Electronic Science and Technology of China)