H03 Poster Session

Tuesday, 3 October 2017: 18:00-20:00
Prince George's Exhibit Hall D/E (Gaylord National Resort and Convention Center)
1336
Sensitivity of Breakdown Voltage of Power Transistors to Dopant Impurities
C. Zhu (Florida State University, Aeropropulsion, Mechatronics and Energy Center) and P. Andrei (Florida A&M University and Florida State University)
1337
(Invited) Three-Section Adjusted Field Limited Rings Applicable for SiC 2200V Power MOSFETs
X. Li, W. Yang, L. Li, X. Deng, and B. Zhang (University of Electronic Science and Technology of China)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 7
See more of: Electronic and Photonic Devices and Systems
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