Resistive Switching in Perovskites

Tuesday, 3 October 2017: 09:00-12:10
Camellia 4 (Gaylord National Resort and Convention Center)
Chairs:
Bilge Yildiz and Jennifer L.M. Rupp
09:00
Welcoming Remarks
09:10
1204
(Invited) Beyond Electrostatic Effects at Oxide Hetero-Interfaces: Electrochemical Phase Change, Strong Electric Fields, and Elastic Strain
B. Yildiz (Depts. of Nuclear Sci.&Eng., Materials Sci.&Eng., MIT)
09:40
1195
(Invited) Understanding Resistive Switching in Manganite-Based Memristive Devices
M. Burriel, D. Pla, O. Chaix-Pluchery, R. Rodriguez-Lamas, M. Boudard, H. Roussel (Laboratoire des Matériaux et du Génie Physique (LMGP)), Q. Rafhay (IMEP-LAHC), and C. Jimenez (Laboratoire des Matériaux et du Génie Physique (LMGP))
10:10
1196
Transferable Memristive Nanoribbons Comprising Solution-Processed Strontium Titanate Nanocubes
J. Wang, S. Choudhary, W. L. Harrigan, A. J. Crosby, K. R. Kittilstved (University of Massachusetts), and S. S. Nonnenmann (University of Massachusetts-Amherst)
10:30
Break
10:50
1197
(Invited) Volume Resistive Switching in Metallic Perovskite Oxides Driven By the Metal-Insulator Transition
A. Palau, J. C. Gonzalez-Rosillo, R. Ortega, J. Jareño, M. Coll (Institut de Ciencia de Materials de Barcelona, CSIC,), B. Arndt (Forschungszentrum Juelich), R. Dittmann (Peter Gruenberg Institute (PGI-7)), I. Maggio-Apprile (Department of Condensed Matter Physics, Univ. of Geneva), J. Suñé (Enginyeria Electrònica, Univ. Autònoma Barcelona), X. Obradors, and T. Puig (Institut de Ciencia de Materials de Barcelona, CSIC)
11:20
1198
(Invited) Resistive Switching in SrTixFe1-XO3 Solid Solution Thin Films: The Influence of Doping on Memristance Dynamics
F. Messerschmitt (Electrochemical Materials MIT, Electrochemical Materials ETH Zurich), E. Sediva (Massachusetts Institute of Technology), M. Jansen (Electrochemical Materials ETH Zurich), and J. L. M. Rupp (Massachusetts Institute of Technology)
11:50
1199
Device Asymmetries in SrTiO3-Based Thin Film Resistive Switches: Influence of Humidity and Defects at Interfaces on Memristance
E. Sediva (ETH Zurich, Massachusetts Institute of Technology), W. J. Bowman (Materials Science and Engineering, MIT), and J. L. M. Rupp (Electrochemical Materials, MIT)
See more of: G05: Oxide Memristors
See more of: Electronic Materials and Processing
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