Resistive Switching in Perovskites

Tuesday, 3 October 2017: 09:00-12:10
Camellia 4 (Gaylord National Resort and Convention Center)
Chairs:
Bilge Yildiz and Jennifer L.M. Rupp
09:00
Welcoming Remarks
09:40
(Invited) Understanding Resistive Switching in Manganite-Based Memristive Devices
M. Burriel, D. Pla, O. Chaix-Pluchery, R. Rodriguez-Lamas, M. Boudard, H. Roussel (Laboratoire des Matériaux et du Génie Physique (LMGP)), Q. Rafhay (IMEP-LAHC), and C. Jimenez (Laboratoire des Matériaux et du Génie Physique (LMGP))
10:10
Transferable Memristive Nanoribbons Comprising Solution-Processed Strontium Titanate Nanocubes
J. Wang, S. Choudhary, W. L. Harrigan, A. J. Crosby, K. R. Kittilstved, and S. S. Nonnenmann (University of Massachusetts)
10:30
Break
10:50
(Invited) Volume Resistive Switching in Metallic Perovskite Oxides Driven By the Metal-Insulator Transition
A. Palau, J. C. Gonzalez-Rosillo, R. Ortega, J. Jareño, M. Coll (Institut de Ciencia de Materials de Barcelona, CSIC,), B. Arndt, R. Dittmann (Forschungszentrum Juelich), I. Maggio-Apprile (Department of Condensed Matter Physics, Univ. of Geneva), J. Suñé (Enginyeria Electrònica, Univ. Autònoma Barcelona), X. Obradors, and T. Puig (Institut de Ciencia de Materials de Barcelona, CSIC)
11:20
(Invited) Resistive Switching in SrTixFe1-XO3 Solid Solution Thin Films: The Influence of Doping on Memristance Dynamics
F. Messerschmitt (Electrochemical Materials MIT, Electrochemical Materials ETH Zurich), E. Sediva (MIT), M. Jansen (Electrochemical Materials ETH Zurich), and J. L. M. Rupp (Massachusetts Institute of Technology)
11:50
Device Asymmetries in SrTiO3-Based Thin Film Resistive Switches: Influence of Humidity and Defects at Interfaces on Memristance
E. Sediva (ETH Zurich, MIT), W. J. Bowman (Materials Science and Engineering, MIT), and J. L. M. Rupp (Electrochemical Materials, MIT)