Y. Ma (Carnegie Mellon University), A. Herzing (National Institute of Standards and Technology), D. Li, N. T. Nuhfer, J. A. Bain (Carnegie Mellon University), and M. Skowronski (Carnegie Mellon Univ.)

S. Watanabe (Dept. Materials Eng., UTokyo, and CMI2-NIMS), B. Xiao (School of Chem. and Chem. Eng., Yantai Univ.), and W. Li (Dept. Materials Eng., UTokyo)

M. Al-Mamun (Virginia Tech), S. W. King (Intel Corporation), and M. K. Orlowski (ECE Department Virginia Tech)

J. Kim (Massachusetts Institute of Technology)

A. Nenning (Massachusetts Institute of Technology), R. Schmitt, R. Korobko (Electrochemical Materials ETH Zurich), and J. L. M. Rupp (Massachusetts Institute of Technology)

D. M. Nminibapiel (National Institute of Standards and Technology (NIST), Old Dominion University), D. Veksler (National Institute of Standards and Technology (NIST)), P. R. Shrestha (Theiss Research, National Institute of Standards and Technology (NIST)), J. P. Campbell, J. T. Ryan (National Institute of Standards and Technology (NIST)), H. Baumgart (Old Dominion University, ECE Department, Dept. Electrical & Computer Eng., Old Dominion Univ.), and K. P. Cheung (National Institute of Standards and Technology (NIST))