Ultra Wide Bandgap Technologies

Wednesday, 4 October 2017: 09:00-11:30
Chesapeake B (Gaylord National Resort and Convention Center)
Chairs:
Kenneth A. Jones and Aivars Lelis
09:00
1338
(Invited) Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices
R. J. Kaplar, A. A. Allerman, A. M. Armstrong, M. H. Crawford, G. W. Pickrell, J. R. Dickerson, J. D. Flicker, M. P. King, K. C. Cross, C. E. Glaser, M. S. Van Heukelom, A. G. Baca, S. Reza, B. Klein, and E. A. Douglas (Sandia National Laboratories)
09:30
1339
(Invited) Growth and Characterization of α-, β-, and ε-Ga2O3 Epitaxial Layers on Sapphire
Y. Yao, L. A. M. Lyle, J. A. Rokholt (Carnegie Mellon University), S. Okur, G. S. Tompa, T. Salagaj, N. Sbrockey (Structured Materials Industries, Inc), R. F. Davis, and L. M. Porter (Carnegie Mellon University)
10:00
1340
(Invited) High Power Diamond Devices with 2-D Transport Channels
D. I. Shahin, A. Christou (University of Maryland), and J. E. Butler (Euclid TechLabs 5900 Harper Rd, Cleveland, Ohio 44139)
10:30
1341
(Invited) Ultrawide Bandgap β-Ga2O3 Thin Films: Growths, Properties and Devices
S. Rafique, L. Han, and H. Zhao (Case Western Reserve University)
11:00
1342
(Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates
R. Dalmau, H. S. Craft, R. Schlesser, S. Mita, J. Smart (HexaTech, Inc.), C. Hitchcock, G. Pandey, T. S. P. Chow (Rensselaer Polytechnic Institute), and B. Moody (HexaTech, Inc.)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 7
See more of: Electronic and Photonic Devices and Systems
<< Previous Session | Next Session >>