GaN & SiC Nanotechnologies

Monday, 2 October 2017: 14:00-15:30
Chesapeake B (Gaylord National Resort and Convention Center)
Chairs:
Ramon Collazo and Balaji Raghothamachar
14:00
1318
(Invited) Rectifiers, Mos Diodes and LEDs Made of Fully Porous GaN Produced by Chemical Vapor Deposition
J. J. Carvajal (University Rovira i Virgili), J. Mena (FiCMA-FiCNA, University Rovira i Virgili), J. Aixart (University Rovira i Virgili), F. Díaz, and M. Aguiló (FiCMA-FiCNA, University Rovira i Virgili)
 
1319
(Invited) Fabrication of AlGaN/InGaN/GaN Quantum Wires for Electronic and Optoelectronic Applications (Cancelled)
15:00
1320
(Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors
G. Sabui (Illinois Institute of Technology), V. Z. Zubialevich, P. Pampili, M. White, P. J. Parbrook (Tyndall National Institute), M. McLaren, M. Arredondo-Arechavala (Queen’s University), and Z. J. Shen (Illinois Institute of Technology)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 7
See more of: Electronic and Photonic Devices and Systems
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