GaN & SiC Characterization II

Wednesday, 4 October 2017: 15:45-16:55
Chesapeake B (Gaylord National Resort and Convention Center)
Chairs:
Aris Christou and Joan J. Carvajal
15:45
1347
(Invited) Novel Implantation Processing and Characterization for Scalable GaN Power Devices
M. S. Goorsky (University of California Los Angeles), T. Bai (UCLA), C. Li (University of California, Los Angeles), M. J. Tadjer (U.S. Naval Research Laboratory), K. D. Hobart (Naval Research Laboratory), T. J. Anderson (NRL), J. K. Hite (Naval Research Laboratory, U.S. Naval Research Laboratory), and B. Feigelson (U.S. Naval Research Laboratory)
16:15
1348
Recent Advancement in Charge and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT
A. D. Findlay, M. Wilson, A. Savtchouk, J. D'Amico, J. Lagowski (Semilab SDI), and R. Hillard (Semilab USA)
16:35
1349
Studies on Doping Concentration Variations in 4H-SiC Substrates Using X-ray Contour Mapping
Y. Yang, J. Guo, B. Raghothamachar, X. Chan, T. Kim, and M. Dudley (Stony Brook University)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 7
See more of: Electronic and Photonic Devices and Systems
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