1230
Atomic Layer Deposition Using Self-Terminated Electrodeposition Reactions

Monday, 14 May 2018: 15:40
Room 211 (Washington State Convention Center)
T. P. Moffat (NIST), Y. Liu (Lam Research Corporation), S. H. Ahn (National Institute of Standards and Technology), N. L. Ritzert (Theiss Research/NIST), R. Wang (Argonne National Laboratory), E. Gillette (University of Maryland), D. Gokcen (National Institute of Standards and Technology), C. Hangarter (U.S. Naval Research Laboratory), H. Tan (NIST, Gaithersburg, MD, USA), L. Bendersky (NIST), H. You (Argonne National Laboratory), and U. Bertocci (National Institute of Standards and Technology)
Recently, an inexpensive “wet form” of ALD based on self-terminated electrodeposition reactions was uncovered that enables controlled formation of ultrathin films of Pt, Ir and iron group metals and alloys thereof. Common to all these systems is the role of reaction intermediates, namely adsorbed H or OH-, in the quenching of metal deposition reactions. Further details on the mechanisms of self-terminated deposition reactions will be discussed. Likewise, the utility and relevance of the process to the synthesis of nanoparticles and thin films, and the study of bimetallic electrocatalysts, will be outlined.