Devices Physics and Characterization 1

Monday, 14 May 2018: 08:00-11:40
Room 309 (Washington State Convention Center)
Chairs:
Joao Antonio Martino and Bich-Yen Nguyen
08:00
Welcoming Remarks
08:10
1455
(Invited) Substrate and Device Engineering for IoT and Automotive
M. Sellier (SOITEC)
08:50
1456
(Invited) Logic Devices for Today and Tomorrow
W. P. Maszara (GLOBALFOUNDRIES)
09:30
Break
10:00
1457
(Invited) Ultra-Low Power III-V-Based MOSFETs and Tunneling FETs
S. Takagi, D. H. Ahn, T. Gotow, C. Yokoyama, C. Y. Chang, K. Endo, K. Kato, and M. Takenaka (The University of Tokyo)
10:40
1458
Impact of X-ray Radiation on SOI MOSFET: Insulator Film Degradation and Hot-Carrier Reliability
Y. Omura (Kansai University, Dept. Electronics)
11:00
1459
On/Off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor
C. H. Chan and J. G. Hwu (National Taiwan University)
11:20
1460
Improvement of gm/ID Method for Detection of Self-Heating Effects
C. A. B. Mori (University of Sao Paulo), P. G. D. Agopian (UNESP, Sao Joao da boa Vista), and J. A. Martino (University of Sao Paulo)
See more of: H02: Advanced CMOS-Compatible Semiconductor Devices 18
See more of: Electronic and Photonic Devices and Systems
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