Process Technology and Simulation

Selberherr, Siegfried

Monday, 14 May 2018: 14:00-16:00

Room 309 (Washington State Convention Center)

Chairs:

Siegfried Selberherr and Francisco Gamiz

14:00

1461

(Invited) Process Variability for Devices at and Beyond the 7 nm Node

J. K. Lorenz (Fraunhofer IISB), A. Asenov (University of Glasgow), E. Baer (Fraunhofer IISB), S. Barraud (CEA, LETI), C. Millar (Synopsys Northern Europe Ltd), and M. Nedjalkov (Institute for Microlectronics, TU-Vienna)

14:40

1462

(Invited) 3D Monolithic Integration

L. Brunet, P. Batude, C. Fenouillet-Beranger, and M. Vinet (CEA-LETI MINATEC Campus)

15:20

1463

Study of Lanthanum Diffusion in HfO₂-Based High-k Gate Stack

M. Zhu, B. Kannan, Y. Zhang, M. Medikonda, Y. Liang, J. Li, A. Dasgupta, L. Pantisano, M. Ozbek, S. Siddiqui (GLOBALFOUNDRIES), and J. Liu (GLOBALFOUNDRIES Inc.)

15:40

1464

Low-Temperature RF Plasma Treatment Effect on Junctionless Pd-Al₂O₃-InGaAs MISFET Operation

Y. V. Gomeniuk (Lashkaryov Institute of Semiconductor Physics NASU,), Y. Y. Gomeniuk, P. N. Okholin (Lashkaryov Institute of Semiconductor Physics NASU), T. M. Nazarova (NTUU "Igor Sikorski KPI"), V. Djara (Tynall National Institute), K. Cherkaoui (Tyndall National Institute, University College Cork), P. K. Hurley (Tyndall National Institute, University Cork, Cork), and A. N. Nazarov (Lashkaryov Institute of Semiconductor Physics NASU,)

See more of: H02: Advanced CMOS-Compatible Semiconductor Devices 18
See more of: Electronic and Photonic Devices and Systems

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