Devices Physics and Characterization 2

Tuesday, 15 May 2018: 16:00-18:10
Room 309 (Washington State Convention Center)
Chairs:
Akira Yoshino and Paula Ghedini Der Agopian
16:00
1478
(Invited) FDSOI: The Technology Alternative to the Mainstream
T. Kammler (Globalfoundries)
16:40
1479
(Invited) Current Status and Trends in RF Silicon-on-Insulator Material and Device
J. P. Raskin (Université Catholique de Louvain (UCL))
17:20
1480
Optimization of Source/Drain Schottky Barrier Height on BE SOI MOSFET
L. S. Yojo (University of Sao Paulo), R. C. Rangel (University of Sao Paulo, FATEC-SP), K. R. A. Sasaki, and J. A. Martino (University of Sao Paulo)
17:40
1481
Simulation Analysis of the Fin Height Influence on the Electrical Parameters of Junctionless Nanowire Transistors
T. A. Ribeiro (Centro Universitário FEI), A. Cerdeira (CINVESTAV-IPN), and M. A. Pavanello (Centro Universitário FEI)
18:00
Concluding Remarks
See more of: H02: Advanced CMOS-Compatible Semiconductor Devices 18
See more of: Electronic and Photonic Devices and Systems
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