III-N Growth and Characterization

Monday, 14 May 2018: 13:30-16:00
Room 213 (Washington State Convention Center)
Chair:
Travis J Anderson
13:30
1407
(Invited) Homoepitaxial GaN Growth on Free-Standing Substrates
J. K. Hite (U.S. Naval Research Laboratory), T. J. Anderson (NRL), M. A. Mastro, L. E. Luna (U.S. Naval Research Laboratory), J. C. Gallagher (NRL), and C. R. Eddy Jr. (U.S. Naval Research Laboratory)
14:00
1408
(Invited) Two-Dimensional Wide Bandgap Materials for Electronic Applications
G. H. Lee (Yonsei University)
14:30
1409
Electrical Properties of Silicon Doped GaN Activated By Ion Implantation
J. C. Gallagher, T. J. Anderson (NRL), L. E. Luna (U.S. Naval Research Laboratory), A. D. Koehler, K. D. Hobart, and F. J. Kub (Naval Research Laboratory)
14:50
Break
15:00
1410
Characterization of Homoepitaxial GaN Films on Commercial GaN Substrates
L. E. Luna (U.S. Naval Research Laboratory), T. J. Anderson (NRL), J. K. Hite (U.S. Naval Research Laboratory), K. D. Hobart, and F. J. Kub (Naval Research Laboratory)
15:20
1411
A Defect Density Profile Extraction Method for GaN Epi-Wafers
H. Kataoka, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima (Tokyo Institute of Technology), and T. Yamamoto (Sumitomo Chemical Co., Ltd.)
15:40
1412
XPS Study of the Chemical Surface Engineering on Ultra-Thin Inaln Layers: Evaluation of Thermal Stability to Oxygen Exposure
Y. Bourlier, M. Bouttemy (Institut Lavoisier de Versailles UMR8180 CNRS-UVSQ), O. Patard, P. Gamarra, S. Piotrowicz (Microelectronic GaN, III-V Lab), J. Vigneron (Institut Lavoisier de Versailles UMR8180 CNRS-UVSQ), R. Aubry (Thales Research & Technology), S. Delage (Microelectronic GaN, III-V Lab), and A. Etcheberry (Institut Lavoisier de Versailles, UVSQ)
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 19
See more of: Electronic and Photonic Devices and Systems
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