Ultra-Wide Bandgap Materials and Devices 1

Tuesday, 15 May 2018: 08:30-12:00
Room 213 (Washington State Convention Center)
Chairs:
Travis J Anderson and Marko J Tadjer
08:30
1413
(Invited) High Al-Content AlGaN for Power Electronics: A Fabrication Perspective
E. A. Douglas, B. Klein, A. A. Allerman, A. M. Armstrong, R. J. Kaplar, A. G. Baca, and J. C. Neely (Sandia National Laboratories)
09:00
1414
(Invited) Latest Progress on B-III-N Alloy Research and Working Principle of TMA Preflow on AlN MOVPE
X. Li (King Abdullah University of Science & Technology (KAUST))
09:30
Break
09:50
1415
(Invited) Process Monitoring of 100 GaN-on-Diamond Wafers
D. Francis and F. Lowe (Element Six)
10:20
1416
(Invited) GaN-on-Diamond RF Transistors: The Next Generation Electronics
M. Kuball, J. W. Pomeroy (University of Bristol), and M. Uren (University of Bristol, UK)
10:50
1417
(Keynote) Gallium Oxide Electronics: Beyond SiC and GaN
M. Higashiwaki (Nat. Inst. of Info. and Comm. Tech.)
11:30
1418
(Invited) High Performance β-Ga2O3 Nano-Membrane Field-Effect Transistors on Sapphire Substrate with Reduced Self-Heating Effect
H. Zhou (UC Berkeley, Purdue University), K. Maize, J. Noh, A. Shakouri, and P. D. Ye (Purdue University)
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 19
See more of: Electronic and Photonic Devices and Systems
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