G01 - Wet Etching

Tuesday, 15 October 2019: 10:50-12:30
Room 209 (The Hilton Atlanta)
Chairs:
Sangwoo Lim and Derek Bassett
10:50
(Invited) Wet Etching inside Advanced High Aspect Ratio Structures: Impact of Dissolved Oxygen
T. Sakazaki (Tokyo Electron Kyushu Ltd.), S. Takahasni, H. Kosugi (Tokyo Electron Kyushu Ltd), D. Bassett (Tokyo Electron America), I. Simms (Tokyo Electron), A. Rotondaro, and T. Hurd (Tokyo Electron America)
11:30
Effect of SiO2 Etching Inhibitor to H3PO4 for the Selective Si3N4 Wet Etching of 3D NAND
T. Kim, C. Son, T. Park, and S. Lim (Dept of Chemical and Biomolecular Eng, Yonsei University)
11:50
Selective Si3N4 Etching in Si3N4/SiO2 Pair-Layer Stack Using Non-H3PO4-Based Superheated Water
S. Lim and C. Son (Dept of Chemical and Biomolecular Eng, Yonsei University)
12:10
Kinetic Effect of Additives in High Temperature Phosphoric Acid on the Etching of Si3N4/SiO2
T. Park, T. Kim, C. Son, and S. Lim (Dept of Chemical and Biomolecular Eng, Yonsei University)