G01 - Wet Etching

Lim, Sangwoo

Tuesday, 15 October 2019: 10:50-12:30

Room 209 (The Hilton Atlanta)

Chairs:

Sangwoo Lim and Derek Bassett

10:50

(Invited) Wet Etching inside Advanced High Aspect Ratio Structures: Impact of Dissolved Oxygen

T. Sakazaki (Tokyo Electron Kyushu Ltd.), S. Takahasni, H. Kosugi (Tokyo Electron Kyushu Ltd), D. Bassett (Tokyo Electron America), I. Simms (Tokyo Electron), A. Rotondaro, and T. Hurd (Tokyo Electron America)

11:30

Effect of SiO₂ Etching Inhibitor to H₃PO₄ for the Selective Si₃N₄ Wet Etching of 3D NAND

T. Kim, C. Son, T. Park, and S. Lim (Dept of Chemical and Biomolecular Eng, Yonsei University)

11:50

Selective Si₃N₄ Etching in Si₃N₄/SiO₂ Pair-Layer Stack Using Non-H₃PO₄-Based Superheated Water

S. Lim and C. Son (Dept of Chemical and Biomolecular Eng, Yonsei University)

12:10

Kinetic Effect of Additives in High Temperature Phosphoric Acid on the Etching of Si₃N₄/SiO₂

T. Park, T. Kim, C. Son, and S. Lim (Dept of Chemical and Biomolecular Eng, Yonsei University)

See more of: G01: 16th International Symposium on Semiconductor Cleaning Science and Technology (SCST 16)
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