In this paper, a two-step clean method for HKMG TiAl protection is discussed, which could improve TiAl damage and make etch-polymer clean. Using Dupont’s EKC580 chemical before traditional HF clean, the TiAl form TiO_x protection layer on the surface, then HF cleans etch by-product polymer. The TiAl loss by HF can improve from 37A to 6A after EKC580 clean. The yield performance is hence much improved.