The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into “all-2D” van der Waals heterostructures and making outstanding progress on fundamental studies, practical applications of 2D materials will require a broader integration strategy. I will present our ongoing and recent work on integration of 2D materials with 3D electronic materials to realize logic switches and memory devices with novel functionality that can potentially augment the performance and functionality of Silicon technology. First, I will present our recent work on gate-tunable diode¹ and tunnel junction devices² based on integration of 2D chalcogenides with Si and GaN. Following this I will present our recent work on non-volatile memories based on Ferroelectric Field Effect Transistors (FE-FETs) made using a heterostructure of MoS₂/AlScN³ and I also will present our work on Ferroelectric Diode (ferrodiode) devices⁴ also based on thin AlScN.

If time permits, I will also cover our ongoing efforts in scaling FE-FETs based on MoS₂ and AlScN to < 100 nm channel lengths over large areas and also discuss in-memory computing using ferrodiode devices and also touch upon our efforts in photonics and light trapping using 2D semiconductors. I will end by giving a broad perspective on future opportunities of 2D semiconductors in micro and nanoelectronics.

References:

1. Miao, J.; Liu, X.; Jo, K.; He, K.; Saxena, R.; Song, B.; Zhang, H.; He, J.; Han, M.-G.; Hu, W.; Jariwala, D. Nano Letters 2020, 20, (4), 2907-2915.
2. Miao, J.; Leblanc, C.; Liu, X.; Song, B.; Zhang, H.; Krylyuk, S.; Davydov, A. V.; Back, T.; Glavin, N. R.; Jariwala, D., 2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density arXiv:2111.06396
3. Liu, X.; Wang, D.; Zheng, J.; Musavigharavi, P.; Miao, J.; Stach, E. A.; Olsson III, R. H.; Jariwala, D. Nano Letters 2021, 21, 3753–3761.
4. Liu, X.; Zheng, J.; Wang, D.; Musavigharavi, P.; Stach, E. A.; Olsson III, R.; Jariwala, D. Applied Physics Letters 2021, 118, 202901