G02 - Advanced Semiconductor Materials, Devices and Processing 2

Tuesday, 31 May 2022: 10:20-12:20
West Meeting Room 115 (Vancouver Convention Center)
Chairs:
Yaw Obeng and Stefan De Gendt
10:20
1271
Electromigration Failure Phenomena of Plasma Etched Ru Lines
J. Q. Su and Y. Kuo (Texas A&M University)
10:40
1272
Increased Hydrophilicity of Silicon Surface through Plasma Treatment with Hydrogen Peroxide Gas
J. Spiegelman (RASIRC), K. Andachi, G. Tsuchibuchi, and K. Suzuki (Taiyo Nippon Sanso Corporation)
11:00
1273
Development of High Resistivity FD-SOI Substrates for mm-Wave Applications
I. Bertrand, P. Flatresse, G. Besnard, J. M. Bethoux (SOITEC), Z. Chalupa, C. Plantier (CEA-Leti), M. Rack, M. Nabet, J. P. Raskin (Universite Catholique de Louvain), and F. Allibert (SOITEC)
11:20
1274
(Digital Presentation) Characterization and Compression Technology of 3D Corner Residue between Dummy Gate and Fin during an Advanced Inductive Coupled Plasma Gate Etch Process in FinFET
X. Xiao (Semiconductor Manufacturing International Corporation), Y. Wang (Semiconductor Manufacturing International Corp.), B. Su (Semiconductor International Manufacturing Corp.), X. Ke, S. Ji (Semiconductor Manufacturing International Corporation), and H. Y. Zhang (Semiconductor Manufacturing International (Shanghai) Corporation)
11:40
1275
Formation of Free Hydrogen Gas By Annealing ALD-Al2O3/Si Stacked Structure
R. Matsumura (National Institute for Materials Science) and N. Fukata (University of Tsukuba, National Institute for Materials Science)
12:00
1276
(Digital Presentation) Extending the Application of Capacitively Coupled Plasma Etching Tools to the Front-End-of-Line Fin-Cut Etching Process for FinFET Mass Production
Z. Zhao, Z. Chen, X. Ke, F. Li, J. Song, S. Ji, and H. Zhang (Semiconductor Manufacturing International Corporation)
See more of: G02: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 12
See more of: Electronic Materials and Processing
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