In order to explain and engineer the intrinsic point defect behavior in large-diameter single crystal Si growing by Czochralski (CZ) method, a unified model valid for all pulling processes, crystal resistivities and not electrically active impurity concentrations is needed by coupling the impacts of thermal stress and dopant atoms. This paper provides the thermal equilibrium concentration of intrinsic point defects (vacancy V and self-interstitial Si I) as functions of thermal stresses, type and concentration of dopant, and concentration of interstitial oxygen in CZ-Si crystal. Global heat transfer during crystal growth in a puller was simulated by CGSim package, software of STR Group, Inc. Visual distribution of V and I concentrations inside a growing Si ingot well explains the previous experimental results of impacts of thermal stress and heavy doping.