Advanced Substrates

Wednesday, 3 October 2018: 08:20-09:30
Universal 24 (Expo Center)
Chairs:
Eddy Roger Simoen and Oleg Kononchuk
08:20
Introductory Remarks
08:30
1173
(Invited) Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth
K. Sueoka (Okayama Prefectural University), Y. Mukaiyama (STR Japan K.K.), K. Kobayashi, H. Fukuda, S. Yamaoka (Okayama Prefectural University), S. Maeda (GlobalWafers Japan Co., Ltd.), M. Iizuka (STR Japan K.K.), and V. M. Mamedov, (STR Group, Inc. - Soft Impact, Ltd.)
09:00
1174
(Invited) High Performance UTB GeOI n and pMOSFETs Featuring HEtero-Layer-Lift-Off (HELLO) Technology
W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, and T. Maeda (AIST)
See more of: H02: High Purity and High Mobility Semiconductors 15
See more of: Electronic and Photonic Devices and Systems
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